3 edition of Electrical impact of SiC structural crystal defects on high electric field devices found in the catalog.
Electrical impact of SiC structural crystal defects on high electric field devices
by National Aeronautics and Space Administration, Glenn Research Center, National Technical Information Service, distributor in [Cleveland, Ohio], [Springfield, Va
Written in English
|Statement||Philip G. Neudeck.|
|Series||[NASA technical memorandum] -- NASA/TM-1999-209647., NASA technical memorandum -- 209647.|
|Contributions||NASA Glenn Research Center.|
|The Physical Object|
IT has long been known that nematic liquid crystals show remarkable orientation effects in electric fields as well as in magnetic fields1. We have observed the formation of domains in thin layers. We have demonstrated a β-Ga 2 O 3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage ( V), based on a quasi-two-dimensional β-Ga 2 O 3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga 2 O 3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO 2 /Si substrate .
Crystal field theory (CFT) describes the breaking of degeneracies of electron orbital states, usually d or f orbitals, due to a static electric field produced by a surrounding charge distribution (anion neighbors). This theory has been used to describe various spectroscopies of transition metal coordination complexes, in particular optical spectra (colors). 14 hours ago Tohmon et al. claimed that the PL of NOV defects in oxygen-deficient high-purity silica glass at nm. The blue PL for NOV defects not only in the Si-implanted SiO 2 film [ 81 ] but also in the RF sputtered Si-rich SiO x film was observed at nm [ 82 ].
The result of both types of defects is that the crystal is able to conduct electricity to a small extent, by an ionic mechanism. When an electric field is applied to a crystal having stoichiometric defects, a nearby ion moves from its lattice site to occupy a hole. Since decades, silicon carbide (SiC) has been avowed as an interesting material for high-power and high-temperature applications because of its significant properties including its wide bandgap energy and high temperature stability. SiC is also professed as an ideal candidate for microsystem applications due to its excellent mechanical properties and chemical inertia, making it .
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Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices Philip G. Neudeck NASA Glenn Research Center, Brookpark Road, M.S.Cleveland, OH USA Keywords: Avalanche Breakdown, Crystal Defect, Diode, Epilayer Growth Pits, Micropipe.
Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices Article in Materials Science Forum January with 55 Reads How we measure 'reads'. Electrical impact of SiC structural crystal defects on high electric field devices (OCoLC) Material Type: Document, Government publication, National government publication, Internet resource: Document Type: Internet Resource, Computer File: All Authors / Contributors: Philip G Neudeck; NASA Glenn Research Center.
Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and Size: KB.
Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices p Performance and Reliability Issues of SiC-Schottky Diodes p Designing, Physical Simulation and Fabrication of High-Voltage ( kV) 4H-SiC Schottky Rectifiers Processed on Cited by: Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices.
Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited) Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.
Reduction of threading screw dislocation without polytype transformation from 4H-SiC was performed by the combination of step-flow growth and spiral growth. On a vicinal 4H-SiC seed crystal, threading screw dislocations are converted to Frank-type stacking faults by step-flow during solution growth.
As the growth proceeds, the defects are excluded to the crystal. Neudeck PG () Electrical impact of SiC structural crystal defects on high electric field devices. Mater Sci Forum –– Article; Google Scholar; 5. Singh R () Reliability and performance limitations in SiC power devices. Microelectron Reliab – During SiC crystal growth, localized loss of structural regularity occurs, and crystal defects, such as stacking faults and dislocation, occur readily.
It is known that some such defects negatively affect the operation of devices. Therefore, in order to increase the yield and reliability of SiC devices, it is important to understand the. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices: Conference Paper: Materials Science Forum, vol.
pp. Electronic Devices, Diodes, Crystal Defects: Neudeck: Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes: Conference Paper.
The commercially available silicon carbide power metal oxide semiconductor field effect transistors (MOSFETs) utilize a P + shielding region to prevent P-base reach-through and high electric field in the gate oxide. The lateral GaN devices are high electron mobility transistors (HEMT) structures that achieve large mobility and sheet charge in.
Electrical impact of SiC structural crystal defects on high electric field devices (OCoLC) Material Type: Government publication, National government publication: Document Type: Book: All Authors / Contributors: Philip G Neudeck; NASA Glenn Research Center.
1. Introduction. Advances in Si/SiO 2 process technology has enabled stable electrical characteristics of Si-based devices and has made Si a widely used material in electronic applications.SiC, on the otherhand, is being exploited for high-power device structures because of its higher thermal conductivity, larger band gap and higher electron mobility than Si.
Silicon carbide (SiC), also known as carborundum / k ɑːr b ə ˈ r ʌ n d əm /, is a semiconductor containing silicon and occurs in nature as the extremely rare mineral tic SiC powder has been mass-produced since for use as an of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications.
The development of quality power MOSFET devices has been dependent on the 4H-SiC crystal quality. As the dominant SiC MOSFET structure is a vertical device, with current flow and electrical field vertical from top-to-bottom (Fig.
1), defects in the epitaxial drift layer have a major impact. A number of investigations have addressed the impact of SiC powder purity on the defect density in SiC crystals grown by PVT (see e.g. [78, 82, 88]). Structural defects may occur for low purity, i.e. >10 ppm.
In this work, we study the high critical breakdown field in β-Ga 2 O 3 perpendicular to its () crystal plane using a β-Ga 2 O 3 /graphene vertical heterostructure.
Measurements indicate a record breakdown field of MV/cm perpendicular to the () plane that is significantly larger than the previously reported values on lateral β-Ga 2 O 3 field-effect-transistors (FETs). Dear Colleagues, It is known that silicon carbide (SiC) is a very promising material in terms of creating various types of devices.
The advances in technology development over the past 20 years have made it possible to obtain, on the basis of SiC, devices that have previously made predictons about the potential of the material in the field of switching the power density and high operating.
Silicon carbide crystal model with edge dislocations introduced in places marked in red. High quality crystals are used to produce mirrors for telescopes and in high voltage devices with high. Crystal defect, imperfection in the regular geometrical arrangement of the atoms in a crystalline solid.
These imperfections result from deformation of the solid, rapid cooling from high temperature, or high-energy radiation (X-rays or neutrons) striking the solid. Located at single points, along.As a result the crystal substrate loses its semi-insulating properties and can be a source of leakage currents and impact ionization currents in p-n diode, p-i-n diode, BJT, MOSFET and power.at least 2bo in 6H-SiC and 3bo in 4H-SiC where bo is the Burger’s vector of a unit screw dislocation that is equal to the c lattice parameter (bo = Å in 6H- and bo = Å in 4H-SiC) .
These defects exist in the popular polytypes of SiC (6H, 4H, 15R and 3C), and their reduction in SiC.